vs-70hf(r) series www.vishay.com vishay semiconductors revision: 29-jan-14 1 document number: 93521 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 standard recovery diodes (stud version), 70 a features ? high surge current capability ? designed for a wide range of applications ? stud cathode and stud anode version ? leaded version available ? types up to 1600 v v rrm ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ? converters ? power supplies ? machine tool controls ? battery charges electrical specifications product summary i f(av) 70 a package do-203ab (do-5) circuit configuration single diode do-203ab (do-5) major ratings and characteristics parameter test conditions 70hf(r) units 10 to 120 140/160 i f(av) 70 70 a t c 140 110 c i f(rms) 110 110 a i fsm 50 hz 1200 1200 a 60 hz 1250 1250 i 2 t 50 hz 7100 7100 a 2 s 60 hz 6450 6450 v rrm range 100 to 1200 1400/1600 v t j -65 to 180 -65 to 150 c voltage ratings type ? number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v v r(br) , minimum avalanche voltage v i rrm maximum at t j = t j maximum ma vs-70hf(r) 10 100 200 200 15 20 200 300 300 40 400 500 500 60 600 720 725 9 80 800 960 950 100 1000 1200 1150 120 1200 1440 1350 140 1400 1650 1550 4.5 160 1600 1900 1750
vs-70hf(r) series www.vishay.com vishay semiconductors revision: 29-jan-14 2 document number: 93521 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) recommended for pa ss-through holes (2) recommended fo r holed threaded heatsinks note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc forward conduction parameter symbol test conditions 70hf(r) units 10 to 120 140/160 maximum average forward current ? at case temperature i f(av) 180 conduction, half sine wave 70 a 140 110 c maximum rms forward current i f(rms) 110 a maximum peak, one cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal ha lf wave, ? initial t j = ? t j maximum 1200 a t = 8.3 ms 1250 t = 10 ms 100 % v rrm reapplied 1000 t = 8.3 ms 1050 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 7100 a 2 s t = 8.3 ms 6450 t = 10 ms 100 % v rrm reapplied 5000 t = 8.3 ms 4550 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 71 000 a 2 ? s low level value of threshold voltage v f(to)1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j = t j maximum 0.79 v high level value of threshold voltage v f(to)2 (i > ? x i f(av) ), t j = t j maximum 1.00 low level value of forward ? slope resistance r f1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j = t j maximum 2.33 m ? high level value of forward ? slope resistance r f2 (i > ? x i f(av) ), t j = t j maximum 1.53 maximum forward voltage drop v fm i pk = 220 a, t j = 25 c, t p = 400 s rectangular wave 1.35 1.46 v thermal and mechanical specifications parameter symbol test conditions 70hf(r) units 10 to 120 140/160 maximum junction and ? storage temperature range t j , t stg -65 to 180 -65 to 150 c maximum thermal resistance, ? junction to case r thjc dc operation 0.45 k/w thermal resistance,case to heatsink r thcs mounting surface, smooth, flat and greased 0.25 maximum allowable mounting torque (+0 %, -10 %) not lubricated thread, tighting on nut (1) 3.4 (30) n m (lbf in) lubricated thread, tighting on nut (1) 2.3 (20) not lubricated thread, tighting on hexagon (2) 4.2 (37) lubricated thread, ti ghting on hexagon (2) 3.2 (28) approximate weight 17 g 0.6 oz. case style see dimensions - link at the end of datasheet do-203ab (do-5) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.08 0.06 t j = t j maximum k/w 120 0.10 0.11 90 0.13 0.14 60 0.19 0.20 30 0.30 0.30
vs-70hf(r) series www.vishay.com vishay semiconductors revision: 29-jan-14 3 document number: 93521 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ra tings characteristics fig. 2 - current ra tings characteristics fig. 3 - current ra tings characteristics fig. 4 - current ra tings characteristics fig. 5 - forward power loss characteristics 130 140 150 160 170 180 0 1020304050607080 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) 70hf(r) series (100v to 1200v) r (dc) = 0.45 k/w thjc 120 130 140 150 160 170 180 020406080100120 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average forward current (a) 70hf(r) series (100v to 1200v) r (dc) = 0.45 k/w thjc 100 110 120 130 140 150 0 1020304050607080 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) 70hf(r) series (1400v to 1600v) r (dc) = 0.45 k/w thjc 90 100 110 120 130 140 150 0 20406080100120 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average forward current (a) 70hf(r) series (1400v to 1600v) r (dc) = 0.45 k/w thjc 0 20 40 60 80 100 120 140 160 180 maximum allowable ambient temperature (c) 1 . 5 k / w 2 k / w 3 k / w 5 k / w r = 0 . 3 k / w - d e l t a r t h s a 0 . 5 k / w 0 . 7 k / w 1 k / w 4 k /w 0 10 20 30 40 50 60 70 80 90 0 1020304050607080 average forward current (a) rms limit maximum average forward power loss (w) conduction angle 180 120 90 60 30 70hf(r) series (100v to 1200v) t = 180c j
vs-70hf(r) series www.vishay.com vishay semiconductors revision: 29-jan-14 4 document number: 93521 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 6 - forward power loss characteristics fig. 7 - forward power loss characteristics fig. 8 - forward power loss characteristics 020406080100120140160180 maximum allowable ambient temperature (c) 5 k / w 3 k / w 2 k / w 1 . 5 k / w 1k / w 0 . 7 k / w 0.5 k / w r = 0 . 3 k / w - d e l t a r t h sa 0 20 40 60 80 100 120 0 20 40 60 80 100 120 dc 180 120 90 60 30 average forward current (a) rms limit maximum average forward power loss (w) conduction period 70hf(r) series (100v to 1200v) t = 180c j 0255075100125150 maximum allowable ambient temperature (c) 1 . 5k / w 2 k / w 3 k / w 5 k / w r = 0 . 3 k / w - d e l t a r t h s a 0 . 5 k / w 4 k / w 0 . 7 k / w 1 k/w 0 10 20 30 40 50 60 70 80 90 0 1020304050607080 average forward current (a) rms limit maximum average forward power loss (w) conduction angle 180 120 90 60 30 70hf(r) series (1400v to 1600v) t = 150c j 0255075100125150 maximum allowable ambient temperature (c) r = 0 . 3 k / w - d e l t a r t hs a 0 . 7 k / w 0 . 5 k / w 1 k / w 1 . 5 k / w 2 k / w 3 k / w 5 k / w 0 20 40 60 80 100 120 020406080100120 dc 180 120 90 60 30 average forward current (a) rms limit maximum average forward power loss (w) conduction period 70hf(r) series (1400v to 1600v) t = 150c j
vs-70hf(r) series www.vishay.com vishay semiconductors revision: 29-jan-14 5 document number: 93521 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - maximum non-re petitive surge current fig. 10 - maximum non-re petitive surge current fig. 11 - forward voltage drop characteristics fig. 12 - thermal impedance z thjc characteristics fig. 13 - forward voltage drop characteristics 300 400 500 600 700 800 900 1000 1100 110100 peak hal f sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 70hf(r) series initial t = t max. @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j j 200 300 400 500 600 700 800 900 1000 1100 1200 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) maximum non repetitive surge current 70hf(r) series initial t = t max. no voltage reapplied rated v reapplied rrm versus pulse train duration. j j 1 10 100 1000 0 0.5 1 1.5 2 2.5 3 t = 25c j instantaneous forward current (a) instantaneous forward voltage (v) t = t max. j j 70hf(r) series 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) steady state value r = 0.45 k/w (dc operation) thjc 70hf(r) series instantaneous forward voltage (v) instantaneous forward current (a) 1 10 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 t j = 25 c t j = t j max. 70hf (r) s erie s (140 to 160)
vs-70hf(r) series www.vishay.com vishay semiconductors revision: 29-jan-14 6 document number: 93521 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95343 device code 5 6 1 3 2 4 70 vs- hf r 160 m 2 1 5 - voltage code x 10 = v rrm (see voltage ratings table) - hf = standard diode - vishay semiconductors product 4 3 - none = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) none = stud base do-203ab (do-5) 1/4" 28unf-2 a m = stud base do-203ab (do-5) m6 x 1 6 - - 70 = standard device 71 = not isolated lead 72 = isolated lead with silicone sleeve (red = reverse polarity) (blue = normal polarity)
document number: 95343 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 29-sep-08 1 do-203ab (do-5) for 70hf(r) and 71hf(r) series outline dimensions vishay semiconductors dimensions for 70hf(r) series in millimeters (inches) 1/4" 28unf-2a for metric devices: m6 x 1 ? 14.6 (0.57) 6.1/7 (0.24/0.27) 4 (0.16) min. 4 (0.16) 10.8 (0.42) 11.4 (0.45) 25.4 (1) max. 11.1 0.4 (0.44 0.02) 1.20 (0.04) 17.40 (0.68)
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 95343 2 revision: 29-sep-08 outline dimensions vishay semiconductors do-203ab (do-5) for 70hf(r) and 71hf(r) series dimensions for 71hf(r) series in millimeters (inches) 12.2 (0.48) max. ? 7 (0.28) max. 134.4 (5.29) max. 123 (4.84) max.
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